MACOM GaN HEMTs
MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.
Features
- High efficiency
- High gain
- Wide bandwidth capabilities
- High breakdown voltage
- High saturated electron drift velocity
- High thermal conductivity
Applications
- 2-Way private radio
- Broadband amplifiers
- Cellular infrastructure
- Test instrumentation
- Class A and AB linear amplifiers suitable for OFDM, W-CDMA, EDGE, and CDMA waveforms
- Satellite communications
- PTP communications links
- Marine radar
- Pleasure craft radar
- Port vessel traffic services
- High-efficiency amplifiers
Comparison Chart
Related Products
MACOM CGHV96100F2 GaN HEMT
IM FET that offers excellent power-added efficiency in comparison to other technologies.
MACOM CGHV27030S GaN HEMT
30W, DC to 6.0GHz, GaN HEMT offers high efficiency with high gain and wide bandwidth capabilities.
MACOM X-Band GaN HEMTs & MMICs
Increases the breakdown field by five times and the power density by a factor of 10 to 20.