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Bench Talk for Design Engineers

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Bench Talk for Design Engineers | The Official Blog of Mouser Electronics


Texas Instruments Wide Bandgap Solutions
On May 16, 2022 in All, General, Power, Wide Bandgap by Texas Instruments
Texas Instruments
Wide bandgap (WBG) technologies, such as gallium nitride (GaN), play a crucial role in answering the demand for greater efficiency, performance, and reliability of high-voltage systems.
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2514 Views
Tagged With: gallium nitride, gan, gan fets, gan power devices, texas instruments, ti, wbg, wide bandgap
How WBG Is a Step Toward Efficiency Being “1”
On May 9, 2022 in All, General, Industrial, Power, Wide Bandgap by Littelfuse
Littelfuse
Wide Bandgap SiC MOSFETs from Littelfuse enable engineers to narrow down the gap between the current efficiency and the dream-value of “1” with a greater safety-margin to achieve their industrial power supply solutions.
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5532 Views
Tagged With: industrial power supply, littelfuse, sic, silicon carbide, wbg, wide bandgap, wide bandgap sic mosfet
New Tech Tuesdays: When Resiliency and Power is Needed, Call on Wide Bandgap
On June 1, 2021 in All, Automotive, General, New Tech Tuesdays by Tommy Cummings
Tommy Cummings
Design engineers can employ WBG semiconductors in diverse applications, ranging from motor drives and power supplies to automotive and transportation systems, including hybrid and electric vehicles, aircraft, and ships.
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2658 Views
Tagged With: 650v silicon carbide power mosfets, gallium nitride, gan, gan041-650wsb gan fets, nexperia, uf3c sic fets, unitedsic, wbg, wbg semiconductors, wide bandgap, wolfspeed
Wide Bandgap Enhances Power Conversion
On March 25, 2020 in All, Power, Wide Bandgap by Paul Lee
Paul Lee
Wide bandgap semiconductors are an enabling technology for a significant improvement in power-conversion efficiency, saving money, and helping to conserve energy in industrial, IT, and consumer applications.
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3377 Views
Tagged With: gallium nitride, GaN, HEMT, MOSFET, SiC, silicon carbide, WBG, wide bandgap
Why SiC Devices Are Ideal for Level 3 EV Charging Applications
On September 24, 2019 in All, Power, Wide Bandgap by Robert Huntley
Robert Huntley
Charging an EV can be a lengthy process, however, Level 3 “fast” DC charging techniques promise much faster charging capabilities that reduce charging times to minutes instead of hours. This efficiency relies on high-speed power conversion, for which new wide-bandgap technologies are well suited.
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10261 Views
Tagged With: Electric vehicle chargers, EV charging, High efficiency EV charging, J1227, Level 3 chargers, ON Semiconductor, SiC, Silicon carbide, WBG, Wide bandgap
SiC Devices Usurp Si MOSFETs and Diodes in Servers, Motors, EVs
On October 1, 2018 in All, Power, Wide Bandgap by Bill Schweber
Bill Schweber
Switching devices—both transistors and diodes—based on silicon-on-carbide (SiC) are redefining capabilities of power-related circuits. These offer far better efficiency and range than today’s best silicon-only MOSFETs, IGBTs, and diodes, and are already in widespread use in top-tier data centers and server farms.
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5563 Views
Tagged With: Electric motors, Electric vehicles, EV, HEV, Hybrid electric vehicles, Power, Power-related circuits, SiC devices, SiC power, SiC technologies, SiC-based Diodes, SiC-based MOSFETs, Silicon-on-carbide devices, WBG, Wide Bandgap

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