In Stock

RoHS

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IRFP4668PBF

Images are for reference only
See Product Specifications

Mouser #:

942-IRFP4668PBF

Mfr. #:

IRFP4668PBF

Mfr.:

Infineon Technologies

Lifecycle:

Obsolete

Datasheet:

ECAD Model:

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Shipping Alert:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Shipping Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	130 A
Rds On - Drain-Source Resistance:	9.7 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	161 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	520 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	74 ns
Forward Transconductance - Min:	150 S
Product Type:	MOSFETs
Rise Time:	105 ns
Factory Pack Quantity:	400
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	64 ns
Typical Turn-On Delay Time:	41 ns
Unit Weight:	0.211644 oz